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Toshiba has developed trench gate SiC MOSFET technology that reduces on resistance while improving short circuit robustness for high efficiency power conversion applications.
Toshiba Electronic Devices & Storage Corporation has developed a new technology for trench gate silicon carbide, SiC, MOSFETs, targeting lower power losses and improved short circuit robustness in power conversion systems.
The technology optimizes the bottom p well structure formed under the trench and the design of the junction field effect transistor, JFET, region, including its width and doping concentration. According to Toshiba, this suppresses short circuit energy generated inside the device and reduces temperature rise, while maintaining gate oxide reliability.
SiC MOSFETs are increasingly used in high efficihigh-efficiencyency power conversion applications, including electric vehicles, renewable energy systems and power supplies for data centers. Compared with conventional silicon MOSFETs, SiC devices can support more efficient power conversion, which is relevant for electric mobility platforms where energy efficiency, thermal behavior and reliability are key design factors.
In prototype devices, Toshiba confirmed an approximately 25% reduction in on resion-resistanceon-resistancestance compared with its conventional trench gate SiC MOSFETs, while maintaining shshort-circuitort shshort-circuitort-circuitcircuit robustness. Lower on resistance can help reduce conduction losses, supporting improved efficiency in power electronics systems.
The company states that the new design approach provides a guideline for achieving both lower loss and improved reliability in trench gate SiC MOSFETs. Test samples of a 1200V trench gate SiC MOSFET incorporating part of this technology, TW007D120E, have been shipping since May 2026.
Toshiba will present details of the technology at the 38th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2026, held in Las Vegas from 24 to 28 May 2026.
For electric bus and commercial vehicle applications, advances in SiC power semiconductor technology are relevant to traction inverters, onboard power conversion, charging systems an,d other high vhigh-voltageolthigh-high-voltagevoltageage electronic architectures where efficiency and reliability directly affect vehicle performance.
